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Vishay IRFD110PBF 100V N CHANNEL DIL MOSFET

Order Code:  

47-0226

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Qty Unit Price (Ex VAT)
5+ £0.384
25+ £0.339
100+ £0.291
250+ £0.270

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45 in Stock, despatched same dayAdditional quantity lead time 5 months

This 1.3W N-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP package that is machine-insertable and can be stacked in multiple combinations on standard 0.1in pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.


  • VDSS 100V
  • RDS(on) 0.54Ω
  • ID 1A
  • Dynamic dv/dt rating
  • Repetitive avalanche rated
  • End stackable
  • 175°C Operating temperature
  • Fast switching
  • Ease of paralleling

Note: Previously manufactured under the International Rectifier name.


This product is subject to a part change notification. Please refer to the PCN.

To find out more about our range of Vishay resistors, diodes, capacitors and switches, please visit our Vishay brand page.


Channel Type N-Channel
Drain Current 1A
Drain-Source Breakdown Voltage 100V
Drain-Source On-Resistance 0.54Ω
Gate Source Voltage 20V
Package/Case HEXDIP
Power Dissipation 1.3W
Type MOSFET

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